document number: 94544 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 "half-bridge" igbt int-a-pak (standard speed igbt), 100 a GA100TS60SFPBF vishay high power products features ? standard speed pt igbt technology ? standard speed: dc to 1 khz, optimized for hard switching speed ?fred pt ? antiparallel diodes with fast recovery ? very low conduction losses ?al 2 o 3 dbc ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed for industrial level benefits ? optimized for high current in verter stages (ac tig welding machines) ? direct mounting to heatsink ? very low junction to case thermal resistance ?low emi product summary v ces 600 v i c dc 220 a v ce(on) at 100 a, 25 c 1.11 v int-a-pak absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 220 a t c = 130 c 100 pulsed collector current i cm 440 peak switching current i lm 440 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 min 2500 maximum power dissipation p d t c = 25 c 780 w t c = 100 c 312 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 100 a - 1.11 1.28 i c = 200 a - 1.39 - v ge = 15 v, i c = 100 a, t j = 125 c - 1.08 1.22 gate threshold voltage v ge(th) i c = 0.25 ma 3 - 6 collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - - 1 ma v ge = 0 v, v ce = 600 v, t j = 125 c - - 10 diode forward voltage drop v fm i c = 100 a, v ge = 0 v - 1.44 1.96 v i c = 100 a, v ge = 0 v, t j = 125 c - 1.25 1.54 gate to emitter leakage current i ges v ge = 20 v - - 250 na www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94544 2 revision: 04-may-10 GA100TS60SFPBF vishay high power products "half-bridge" igbt int-a-pak (standard speed igbt), 100 a switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge q g i c = 100 a v cc = 400 v v ge = 15 v - 640 700 nc gate to emi tter charge q ge - 108 120 gate to collector charge q gc - 230 300 rise time t r i c = 100 a v cc = 480 v v ge = 15 v r g = 15 t j = 25 c -0.45- s fall time t f -1.0- turn-on switching energy e on -46 mj turn-off switching energy e off -2329 total switching energy e ts -2735 turn-on switching energy e on i c = 100 a, v cc = 480 v v ge = 15 v, r g = 15 t j = 125 c -612 turn-off switching energy e off -3540 total switching energy e ts -4152 input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz - 16 250 - pf output capacitance c oes - 1040 - reverse transfer capacitance c res - 190 - diode reverse recovery time t rr i f = 50 a di f /dt = 200 a/s v rr = 200 v - 91 155 ns diode peak reverse current i rr -10.615 a diode recovery charge q rr - 500 900 nc diode reverse recovery time t rr i f = 50 a di f /dt = 200 a/s v rr = 200 v, t j = 125 c - 180 344 ns diode peak reverse current i rr - 17 20.5 a diode recovery charge q rr - 1633 2315 nc thermal and mechanical specifications parameter symbol min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case per switch r thjc --0.16 c/w per diode - - 0.48 case to sink per module r thcs -0.1- mounting torque case to heatsink - - 4 nm case to terminal 1, 2, 3 - - 3 weight - 185 - g www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94544 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 GA100TS60SFPBF "half-bridge" igbt int-a-pak (standard speed igbt), 100 a vishay high power products fig. 1 - typical output characteristics fig. 2 - typical transfer characteristics fig. 3 - maximum co llector current vs. case temperature fig. 4 - typical collecto r to emitter voltage vs. junction temperature fig. 5 - typical gate charge vs. gate to emitter voltage fig. 6 - typical switching losses vs. gate resistance i c , collector-to-emitter current (a) v ce , collector-to-emitter voltage (v) 10 100 1000 0.6 0.8 1 1.2 1.4 1.6 1.8 tj = 25?c vge = 15v tj = 125?c i c , collector-to-emitter current (a) v ge , gate-to-emitter voltage (v) 1 10 100 1000 5.5 6.5 7.5 8.5 vce = 10v 380s pulse width t = 25?c t = 125?c j j maximum dc collector current (a) t c , case temperature (c) 0 40 80 120 160 200 240 25 50 75 100 125 150 v ce , collector-to-emitter voltage (v) t j , junction temperature (c) 0.7 0.9 1.1 1.3 1.5 25 50 75 100 125 150 i = 50a i = 100a i = 200a c c v ge , gate-to-emitter voltage (v) q g , total gate charge (nc) 0 5 10 15 20 0 100 200 300 400 500 600 700 vcc = 400v ic = 100a switching losses (mj) r g , gate reistance () 0 5 10 15 20 25 30 35 10 20 30 40 50 eon eoff tj = 25?c, vce = 480v vge = 15v, ic = 100a www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94544 4 revision: 04-may-10 GA100TS60SFPBF vishay high power products "half-bridge" igbt int-a-pak (standard speed igbt), 100 a fig. 7 - typical switching losses vs. collector to emitter current fig. 8 - maximum forward voltage drop vs. instantaneous forward current fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical reverse recovery current vs. di f /dt switching losses (mj) i c , collector-to-emitter current (a) 0 10 20 30 40 50 60 04080120160 eon eoff tj = 125?c vce = 480v vge = 15v rge = 15 instantaneous forward current - i f (a) forward voltage drop- v fm (v) 1 10 100 1000 0 0.5 1 1.5 2 2.5 tj = 25?c tj = 125?c t rr (ns) di f /dt - a/s 10 100 1000 0 0 0 1 0 0 1 vr = 200v if = 50a, tj = 125?c if = 50a, tj = 25?c i rrm (a) di f /dt - a/s 1 10 100 0 0 0 1 0 0 1 vr = 200v if = 50a, tj = 125?c if = 50a, tj = 25?c www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94544 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 GA100TS60SFPBF "half-bridge" igbt int-a-pak (standard speed igbt), 100 a vishay high power products fig. 11 - typical stored charge vs. di f /dt ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95173 q rr (nc) di f /dt - a/s 100 1000 10000 0 0 0 1 0 0 1 vr = 200v if = 50a, tj = 125?c if = 50a, tj = 25?c 1 - essential part number igbt modules 2 - current rating (100 = 100 a) 3 - circuit configuration (t = half bridge) 4 - int-a-pak 5 - voltage code (60 = 600 v) 6 - speed/type (s = standard speed igbt) 7 - diode type 8 - pbf = lead (pb)-free device code 5 13 24 678 ga 100 t s 60 s f pbf 1 2 3 5 4 7 6 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95173 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-09 1 int-a-pak igbt outline dimensions vishay semiconductors dimensions in millimeters (inches) 17 (0.67) 23 (0.91) 5 (0.20) 23 (0.91) 14.3 (0.56) 3 screws m6 x 10 66 (2.60) 94 (3.70) 35 (1.38) 14.5 (0.57) 1 2 3 2.8 x 0.8 (0.11 x 0.03) 5 4 7 6 37 (1.44) 80 (3.15) ? 6.5 (? 0.25) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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